Electrically Injected GeSn Vertical-Cavity Surface Emitters on Silicon-on-Insulator Platforms

Author:

Huang Bo-Jun1,Chang Chen-Yang1,Hsieh Yun-Da1,Soref Richard A.2,Sun Greg2ORCID,Cheng Hung-Hsiang3,Chang Guo-En1ORCID

Affiliation:

1. Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan

2. Department of Engineering, University of Massachusetts−Boston, Boston, Massachusetts 02125, United States

3. Center for Condensed Matter Sciences, and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

Funder

Air Force Office of Scientific Research

Ministry of Science and Technology, Taiwan

Ministry of Education of Taiwan

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

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1. Optimization of GeSn nanostructures via tuning of femtosecond laser parameters;Applied Surface Science;2025-01

2. Optically-Pumped Lasing in GeSn Slab Waveguide on Silicon;2024 IEEE Silicon Photonics Conference (SiPhotonics);2024-04-15

3. Research progress of out-of-plane GeSn nanowires;Nanotechnology;2024-03-26

4. Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission;ACS Photonics;2024-03-01

5. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02

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