Optically-Pumped Lasing in GeSn Slab Waveguide on Silicon-Reference-Cited by-同舟云学术

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Optically-Pumped Lasing in GeSn Slab Waveguide on Silicon

Published:2024-04-15 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Silicon Photonics Conference (SiPhotonics)
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Author:

Huang Yin-Pu¹,Wu Bo-Rui²,Jheng Yue-Tong³,Chang Guo-En³

Affiliation:

1. National Chung Cheng University,Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing With High-Tech Innovations (AIM-HI),Chiayi County,Taiwan

2. National Chung Cheng University,Graduate Institute of Opto-Mechatronics Mechatronics and Advanced Institute of Manufacturing With High-Tech Innovations (AIM-HI),Chiayi County,Taiwan

3. National Chung Cheng University,and Mechatronics and Advanced Institute of Manufacturing With High-Tech Innovations (AIM-HI),Department of Mechnaical Engineering,Chiayi County,Taiwan

Funder

National Science and Technology Council

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10543257/10543280/10544033.pdf?arnumber=10544033

Reference9 articles.

1. Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers

2. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

3. Lasing in direct-bandgap GeSn alloy grown on Si

4. Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

5. GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain

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