Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence-Reference-Cited by-同舟云学术

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Published:2014-10-13 Issue:15 Volume:105 Page:151109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghetmiri Seyed Amir¹,Du Wei¹,Margetis Joe²,Mosleh Aboozar¹,Cousar Larry¹,Conley Benjamin R.¹,Domulevicz Lucas³,Nazzal Amjad³,Sun Greg⁴,Soref Richard A.⁴,Tolle John²,Li Baohua⁵,Naseem Hameed A.¹,Yu Shui-Qing¹

Affiliation:

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA

3. Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, Pennsylvania 18766, USA

4. Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, USA

5. Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701, USA

Funder

Small Business Innovation Research (SBIR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4898597

Reference27 articles.

1. Silicon-based optoelectronics

2. Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructures

3. Advances in SiGeSn technology

4. Ge–Sn semiconductors for band-gap and lattice engineering

5. New classes of Si-based photonic materials and device architectures via designer molecular routes

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