Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K-Reference-Cited by-同舟云学术

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Published:2017-12-15 Issue:3 Volume:5 Page:827-833
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Margetis Joe¹,Al-Kabi Sattar²,Du Wei³⁴^ORCID,Dou Wei²,Zhou Yiyin²⁵,Pham Thach²⁵,Grant Perry²⁵,Ghetmiri Seyed²,Mosleh Aboozar²,Li Baohua⁵,Liu Jifeng⁶,Sun Greg⁷^ORCID,Soref Richard⁷,Tolle John¹,Mortazavi Mansour³,Yu Shui-Qing²

Affiliation:

1. ASM, 3440 East University Drive, Phoenix, Arizona 85034, United States

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, United States

3. Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, Arkansas 71601, United States

4. Department of Electrical Engineering, Wilkes University, Wilkes-Barre, Pennsylvania 18766, United States

5. Arktonics, LLC. 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701, United States

6. Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States

7. Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125, United States

Funder

Air Force Office of Scientific Research

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b00938

Reference37 articles.

1. The Past, Present, and Future of Silicon Photonics

2. Mid-infrared photonics in silicon and germanium

3. Group IV Photonics: Driving Integrated Optoelectronics

4. Silicon waveguided components for the long-wave infrared region

5. Silicon optical modulators

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