Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates-Reference-Cited by-同舟云学术

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Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates

Published:2010-09 Issue:5 Volume:108 Page:054906
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Myers-Ward R. L.,VanMil B. L.,Lew K.-K.,Klein P. B.,Glaser E. R.,Caldwell J. D.,Mastro M. A.,Wang L.,Zhao P.,Eddy C. R.,Gaskill D. K.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3475152

Reference35 articles.

1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

2. Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor

3. Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

4. Material characterization need for SiC-based devices

5. Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates;Journal of Electronic Materials;2024-03-06

2. Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4H - SiC;PRX Quantum;2022-03-16

3. Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques;Journal of Luminescence;2019-08

4. Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC;Measurement Science and Technology;2015-11-12

5. Thick 4H-SiC Epitaxial Growth and Defect Reduction for Very High Voltage Bipolar Devices;ECS Journal of Solid State Science and Technology;2013

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