1. W. Zhou, I. Khlebnikov, T.S. Sudarshan, M.A. Capano, W.C. Mitchel, Proceedings of the International Conference on Silicon Carbide, III-nitrides and Related Materials, Stockholm, 1997, p. 525.
2. V. Grivickas, J. Linnros, A. Galeckas, Proceedings of the International Conference on Silicon Carbide, III-nitrides and Related Materials, Stockholm, 1997, p. 529.
3. G. Pensl, H. Morkoç, B. Monemar, E. Janzén (Eds.), Proceedings of the Seventh International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, 1997 (Mat. Sci. Forum, vols. 264–268, 1998, p. 1606, 2-Vol. Set).
4. Measuring and modeling minority carrier transport in heavily doped silicon
5. A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, C. Hallin, Proceedings of the International Conference on Physics of Semiconductors, ICPS ’24, Jerusalem, Tu-177, 1998.