Material characterization need for SiC-based devices
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC
2. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3CSiC
3. Ga-bound excitons in 3C-, 4H-, and 6H-SiC
4. Photoluminescence and transport studies of boron in 4H SiC
5. Proof of the involvement of Ti in the low-temperature ABC luminescence spectrum of 6H SiC
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