Ga-bound excitons in 3C-, 4H-, and 6H-SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.13503/fulltext
Reference12 articles.
1. Site effect on the impurity levels in4H,6H, and15RSiC
2. Aluminum acceptor four particle bound exciton complex in 4H, 6H, and 3CSiC
3. Exciton Recombination Radiation and Phonon Spectrum of6HSiC
4. Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC
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