Terahertz radiation from silicon carbide charge plasma avalanche transit time source
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
https://link.springer.com/content/pdf/10.1007/s12046-021-01748-4.pdf
Reference69 articles.
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2. Acharyya A and Banerjee J P 2013 Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time Based Approach to Determine the Upper Cut-off Frequency Limits. IETE Journal of Research 59(2): 118–127
3. Chiang M H, Lin J N, Kim K and Chuang C T 2007 Random dopant fluctuation in limited-width FinFET technologies. IEEE Trans. Electron Devices 54(8): 2055–2060
4. Martinez A, Barker J R, Svizhenko A, Anantram M P and Asenov A 2007 The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs: A NEGF Study. IEEE Trans. Nanotechnol. 6(4): 438–445
5. Ho J C, Yerushalmi R, Jacobson Z A, Fan Z, Alley R L and Javey A 2008 Controlled nanoscale doping of semiconductors via molecular monolayers. Nature Mater. 7(1): 62–67
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