Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources-Reference-Cited by-同舟云学术

Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources

Published:2012-11-16 Issue:1 Volume:4 Page:1-14
ISSN:2190-5509
Container-title:Applied Nanoscience
language:en
Short-container-title:Appl Nanosci

Author:

Acharyya Aritra,Banerjee J. P.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Cell Biology,Physical and Theoretical Chemistry,Materials Science (miscellaneous),Atomic and Molecular Physics, and Optics,Biotechnology

Link

http://link.springer.com/content/pdf/10.1007/s13204-012-0172-y.pdf

Reference58 articles.

1. Acharyya A, Banerjee JP (2012) Analysis of photo-irradiated double-drift region silicon impact avalanche transit time devices in the millimeter-wave and terahertz regime. Terahertz Sci Technol 5:97–113

2. Acharyya A, Banerjee JP (2013) Potentiality of IMPATT devices as terahertz source: an avalanche response time based approach to determine the upper cut-off frequency limits. IETE J Res 59 (Accepted)

3. Acharyya A, Pal B, Banerjee JP (2010) Temperature distribution inside semi-infinite heat sinks for IMPATT sources. Int J Eng Sci Technol 2:5142–5149

4. Acharyya A, Mukherjee J, Mukherjee M, Banerjee JP (2011) Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Arch Phys Res 2:107–126

5. Acharyya A, Banerjee S, Banerjee JP (2012) Calculation of avalanche response time for determining the high frequency performance limitations of IMPATT devices. J Electron Dev 12:756–760

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