Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits-Reference-Cited by-同舟云学术

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Potentiality of IMPATT Devices as Terahertz Source: An Avalanche Response Time-based Approach to Determine the Upper Cut-off Frequency Limits

Published:2013 Issue:2 Volume:59 Page:118
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE J Res

Author:

Acharyya Aritra,Banerjee JP

Publisher

Medknow

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications;Microelectronics Journal;2024-09

2. Research on measurement technology of terahertz beam divergence angle;Optical Engineering;2024-05-25

3. Edge-Terminated AlGaN/GaN/AlGaN Multi- Quantum Well IMPATT Sources for Terahertz Wave Generation;2024-01-18

4. Mutually Injection Locked Multi-Element Terahertz Oscillator Based on AlGaN/GaN High Electron Mobility Avalanche Transit Time Devices;IEEE Access;2024

5. Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy;Photonics;2023-07-10

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