Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications
Author:
Funder
Foundation for Innovative Research Groups of the National Natural Science Foundation of China
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference34 articles.
1. A proposed high-frequency, negative-resistance diode;Read;The Bell System Technical Journal,1958
2. Microwave avalanche diodes;Sze;Proc. IEEE,1971
3. 200-GHz 50-mW CW oscillation with silicon SDR IMPATT diodes;Ishibashi;IEEE Trans. Microw. Theor. Tech.,1976
4. Y-band (170-260 GHz) tunable CW IMPATT diode oscillators;Chao;IEEE Trans. Microw. Theor. Tech.,1977
5. Design and performances of maximum‐efficiency single‐ and double‐drift‐region GaAs IMPATT diodes in the 3–18‐GHz frequency range;Pribetich;J. Appl. Phys.,1978
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