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Microwave avalanche diodes

Published:1971 Issue:8 Volume:59 Page:1140-1154
ISSN:0018-9219
Container-title:Proceedings of the IEEE
language:
Short-container-title:Proc. IEEE

Author:

Sze S.M.,Ryder R.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/5/31147/01450290.pdf?arnumber=1450290

Cited by 94 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications;Microelectronics Journal;2024-09

2. Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation;Nanomaterials;2024-05-17

3. 15 GHz GaN Hi–Lo IMPATT Diodes With Pulsed Peak Power of 25.5 W;IEEE Transactions on Electron Devices;2024

4. Junction Diameter Dependence of Oscillation Frequency of GaN IMPATT Diode Up to 21 GHz;IEEE Electron Device Letters;2023-08

5. Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices;Journal of Computational Electronics;2023-05-25

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