Design and performances of maximum‐efficiency single‐ and double‐drift‐region GaAs IMPATT diodes in the 3–18‐GHz frequency range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324480
Reference13 articles.
1. Theoretical and experimental study of GaAs IMPATT oscillator efficiency
2. A Proposed High-Frequency, Negative-Resistance Diode
3. Effect of transferred‐electron velocity modulation in high‐efficiency GaAs IMPATT diodes
4. Premature collection mode in IMPATT diodes
5. Effect of electron-electron interactions on microwave performance of IMPATT GaAs diodes
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2. Experimental demonstration of GaN IMPATT diode at X-band;Applied Physics Express;2021-03-03
3. Growth and photoreflectance characterization of GaAs impact ionization avalanche transit time diodes;Journal of Electronic Materials;1999-12
4. Heterojunction IMPATT diodes;IEEE Transactions on Electron Devices;1992
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