Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques-Reference-Cited by-同舟云学术

Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

Published:2019-08 Issue: Volume:212 Page:92-98
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Ščajev Patrik,Miasojedovas Saulius,Subačius Liudvikas,Jarašiūnas Kęstutis,Mazanik Alexander V.,Korolik Olga V.,Kato Masashi

Funder

Lithuania- Belarus joint research

Belarusian Republican Foundation for Fundamental Research

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference55 articles.

1. Carrier lifetime measurement in n− 4H-SiC epilayers

2. Slow de-trapping of minority holes in n-type 4H-SiC epilayers

3. Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature

4. Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes

5. Control of carbon vacancy in SiC toward ultrahigh-voltage power devices

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