Thick 4H-SiC Epitaxial Growth and Defect Reduction for Very High Voltage Bipolar Devices-Reference-Cited by-同舟云学术

Thick 4H-SiC Epitaxial Growth and Defect Reduction for Very High Voltage Bipolar Devices

Published:2013 Issue:8 Volume:2 Page:N3036-N3040
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Miyazawa Tetsuya,Tsuchida Hidekazu

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. 21-kV SiC BJTs With Space-Modulated Junction Termination Extension

3. Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates

4. 15 kV IGBTs in 4H-SiC

5. Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

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