Affiliation:
1. Cree Incorporation
2. Cree, Incorporation
3. National Institute of Standards and Technology
Abstract
The latest developments in ultra high voltage 4H-SiC IGBTs are presented. A 4H-SiC P-IGBT, with a chip size of 8.4 mm x 8.4 mm and an active area of 0.32 cm2, which is double the active area of the previously reported devices [1], exhibited a blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 41 mΩ-cm2 with a gate bias of -20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 17 kV, and demonstrated a room temperature differential specific on-resistance of 25.6 mΩ-cm2 with a gate bias of 20 V. Field-Stop buffer layer design was used to control the charge injection from the backside. A comparison between N- and P- IGBTs, and the effects of different buffer designs, are presented.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
1. S. Ryu et al, Materials Science Forums Vols. 717-720 (2012), p.1135 – 1138.
2. M. Das et al., Proceedings of ISPSD 2008, Orlando, FL, May 18-22, pp.253-255.
3. S. Ryu et al, Proceedings of ISPSD 2012, 3 – 7 June 2012, Bruges, Belgium, pp.257-260.
Cited by
13 articles.
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