Recent advances in 4H-SiC epitaxy for high-voltage power devices-Reference-Cited by-同舟云学术

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Recent advances in 4H-SiC epitaxy for high-voltage power devices

Published:2018-05 Issue: Volume:78 Page:2-12
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Tsuchida Hidekazu,Kamata Isaho,Miyazawa Tetsuya,Ito Masahiko,Zhang Xuan,Nagano Masahiro

Funder

Japan Society for the Promotion of Science

Council for Science, Technology and Innovation

NEDO

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference84 articles.

1. Power semiconductor device figure of merit for high-frequency applications;Baliga;IEEE Electron Device Lett.,1989

2. Fundamentals of Silicon Carbide Technology;Kimoto,2014

3. Wide band gap semiconductor technology for energy efficiency;Agarwal;Mater. Sci. Forum,2016

4. Bulk growth and large area SiC crystals;Powell;Mater. Sci. Forum,2016

5. Step-controlled epitaxial growth of high-quality SiC layers;Kimoto;Phys. Status Solidi (b),1997

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3. Observation and Suppression of Growth Pits Formed on 4H-SiC Epitaxial Films Grown Using Halide Chemical Vapor Deposition Process;IEEE Transactions on Semiconductor Manufacturing;2024-08

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