Observation and Suppression of Growth Pits Formed on 4H-SiC Epitaxial Films Grown Using Halide Chemical Vapor Deposition Process
Author:
Affiliation:
1. TFW Equipment Engineering Department, NuFlare Technology, Inc., Yokohama, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/66/10636181/10511277.pdf?arnumber=10511277
Reference9 articles.
1. High growth rate process in a SiC horizontal CVD reactor using HCl
2. Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation
3. Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
4. Elimination of silicon droplets formation during 4H-SiC epitaxial growth by chloride-based CVD in a vertical hot-wall reactor;Li;Mater. Sci. Forum,2020
5. In situObservation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
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