Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor-Reference-Cited by-同舟云学术

Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor

Published:2020-11 Issue: Volume:1014 Page:3-7
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Li Chuan Gang¹,Ju Tao²,Zhang Li Guo²,Kan Xiang²,Zhang Xuan²^ORCID,Qin Juan¹,Zhang Bao Shun²,Zhang Ze Hong²

Affiliation:

1. Shanghai University

2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

Abstract

The growth pits formed during 5-10 μm 4H-SiC epitaxial growth by a home-built vertical hot-wall CVD reactor are investigated and their formation mechanisms are discussed. The origin of the growth pits is believed to be the silicon droplets related to the unoptimized growth condition. The growth pits are successfully removed by adding more HCl to the in-situ etching stage and the after-growth cooling stage.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1014.3.pdf

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