The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology-Reference-Cited by-同舟云学术

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The role of excess silicon and in situ etching on 4H SiC and 6H SiC epitaxial layer morphology

Published:1996-10 Issue:3-4 Volume:167 Page:586-595
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Burk A.A.,Rowland L.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. Silicon Carbide and Related Materials;Brandt,1995

2. presented at the Workshop on Compound Semiconductor Materials and Devices;Burk,1995

3. RF performance of SiC MESFET's on high resistivity substrates

4. Silicon Carbide and Related Materials;Siergiej,1995

5. Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

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