Industrial Perspective of SiC Epitaxy
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch4
Reference65 articles.
1. Advances in 3x150 mm Hot-Wall and 6x150 mm Warm-Wall SiC Epitaxy for 10kV-Class Power Devices
2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
3. 4H-SiC MESFET's with 42 GHz f/sub max/
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