Abstract
We discuss two defect related practical improvements in the corona noncontact CV metrology, (CnCV) for SiC. The improvements are introduced in response to requests from industrial tool users. The first improvement quantifies mapping of electrically active defects with the QUAD technique (Quality, Uniformity, and Defects). It provides the capability of user selectable die grids directly comparable with Near UV-PL and optical defect mapping. This shall enhance understanding of the device killer defects and help to correlate epilayer defects and device yield. The second improvement introduces auto-remeasurement of outliers appearing in doping measurements on defective sites. This procedure is analogous to that used in the Hg probe technique and it provides a means for correcting defect related distortions in SPC doping monitoring charts.
Publisher
Trans Tech Publications, Ltd.
Reference8 articles.
1. A.A. Burk, M. O'Loughlin, Denis Tsvetkov and S. Ustin, "Industrial Perspective of SiC Epitaxy." Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications 1 (2021): 75-92.
2. M. Wilson, Compound Semiconductor, 25-6 (2019), pp.20-26.
3. V. Pushkarev, T. Rana, M. Gave, E. Sanchez, A. Savtchouk, M. Wilson, D. Marinskiy and J. Lagowski, Solid State Phenomena 342 (2023), pp.99-104
4. M. Wilson, D. Greenock, D. Marinskiy, C. Almeida, J. D'Amico and J. Lagowski, "The Phenomenon of Charge Activated Visibility of Electrical Defects In 4H-SiC; Application for Comprehensive Non-Contact Electrical and UV-PL Imaging and Recognition of Critical Defects", CS Mantech 2021 Proceedings, Orlando, FL.
5. D.K. Schroder, Chapter 9: Charge-based and Probe Characterization, in: Semiconductor Material and Device Characteristics, Wiley-Interscience, Hoboken, New Jersey, 2006, p.523.