Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers

Abstract

The recently introduced corona charge non-contact capacitance-voltage technique, CnCV, is analyzed considering the production needs of epitaxial SiC wafers. The interfering mechanism of charge dissipation on fresh epitaxial 4H-SiC is identified as surface diffusion and is effectively eliminated by optimized ultraviolet pretreatment (UVPT). It is shown that optimized UVPT increases the CnCV dopant measurement voltage range and the depth of profiling. Concurrent UVPT and measurement provides a practical solution for improving throughput for multiple wafers. Electrical defect mapping shows that UVPT reduces the effective defect size. This will be helpful to avoid defects in patterns used for CnCV dopant measurements.