Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
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2. Step-Controlled Epitaxial Growth of High-Quality SiC Layers
3. Growth of SiC by ?Hot-Wall? CVD and HTCVD
4. Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process Simulation
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