Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation-Reference-Cited by-同舟云学术

Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

Published:2013-12-18 Issue:1 Volume:7 Page:015502
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Fujibayashi Hiroaki,Ito Masahiko,Ito Hideki,Kamata Isaho,Naito Masami,Hara Kazukuni,Yamauchi Shoichi,Suzuki Kunihiko,Yajima Masayoshi,Mitani Shinichi,Suzuki Katsumi,Aoki Hirofumi,Nishikawa Koichi,Kozawa Takahiro,Tsuchida Hidekazu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=1/a=015502/pdf

Reference21 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

3. Epitaxial growth of SiC in a chimney CVD reactor

4. Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

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