Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC-Reference-Cited by-同舟云学术

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

Published:2021-04 Issue: Volume:208 Page:116746
ISSN:1359-6454
Container-title:Acta Materialia
language:en
Short-container-title:Acta Materialia

Author:

Fujie Fumihiro^ORCID,Peng Hongyu,Ailihumaer Tuerxun^ORCID,Raghothamachar Balaji^ORCID,Dudley Michael,Harada Shunta,Tagawa Miho,Ujihara Toru

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Metals and Alloys,Polymers and Plastics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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4. Relationship between threading dislocation and leakage current in 4H-SiC diodes;Fujiwara;Appl. Phys. Lett.,2012

5. Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes;Fujiwara;Appl. Phys. Lett.,2012

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1. Distribution of the electrical resistivity of a n-type 4H-SiC crystal;Journal of Crystal Growth;2024-09

2. Application of laboratory micro X-ray fluorescence devices for X-ray topography;Journal of Applied Crystallography;2024-05-17

3. Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations;Materials Science in Semiconductor Processing;2024-05

4. Origins and characterization techniques of stress in SiC crystals: A review;Progress in Crystal Growth and Characterization of Materials;2024-02

5. 3D structure of threading screw dislocation at a deep location in 4H-SiC using 3D micro-X-ray topography;Japanese Journal of Applied Physics;2024-01-04