Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations-Reference-Cited by-同舟云学术

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Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations

Published:2024-05 Issue: Volume:174 Page:108207
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Cheng Qianyu,Chen Zeyu,Hu Shanshan,Liu Yafei,Raghothamachar Balaji^ORCID,Dudley Michael

Funder

Advanced Research Projects Agency - Energy

Argonne National Laboratory

U.S. Department of Energy

Brookhaven National Laboratory

St. Bonaventure University

Office of Science

Publisher

Elsevier BV

Reference47 articles.

1. Current SiC technology for power electronic devices beyond Si;Matsunami;Microelectron. Eng.,2006

2. Comparison of 3C SiC, 6H SiC and 4H SiC MESFETs performances;Codreanu;Mater. Sci. Semicond. Process.,2000

3. Electrical impact of SiC structural crystal defects on high electric field devices;Neudeck;Mater. Sci. Forum,2000

4. Synchrotron X-radiation topography;Tanner;Mater. Sci. Rep.,1992

5. The early days of high-resolution X-ray topography;Lang;J. Phys. Appl. Phys.,1993

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography;Defect and Diffusion Forum;2024-08-22

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