Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates-Reference-Cited by-同舟云学术

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Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates

Published:2024-03-06 Issue:5 Volume:53 Page:2429-2436
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Shao Hongyu,Yang Xianglong,Wang Desheng,Li Xiaomeng,Chen Xiufang,Hu Guojie,Li Huadong,Xiong Xixi,Xie Xuejian,Hu Xiaobo,Xu Xiangang

Funder

the National Natural Science Foundation of China

Taishan Scholar Foundation of Shandong Province

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11664-024-10959-4.pdf

Reference26 articles.

1. R.F. Davis, J.W. Palmour and J.A. Edmond, in International Technical Digest on Electron Devices (1990), p. 785–788.

2. J.B. Casady and R.W. Johnson, Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications: A Review. Solid State Electron. 39, 1409–1422 (1996).

3. D.L. Barrett, R.G. Seidensticker, W. Gaida, R.H. Hopkins, and W.J. Choyke, SiC Boule Growth by Sublimation Vapor Transport. J. Cryst. Growth 109, 17–23 (1991).

4. H. Morkoc, S.S. Strite, G.B. Gao, M.E. Lin, and M.B. Burns, Large-Band-Gap SiC, III-V Nitride, and II-VI ZnSe-Based Semiconductor Device Technologies. J. Appl. Phys. 76, 1363–1398 (1994).

5. J.L. Hudgins, G.S. Simin, E. Santi, and M.A. Khan, An Assessment of Wide Bandgap Semiconductors for Power Devices. IEEE Trans. Power Electron. 18, 907–914 (2003).

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