Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates-Reference-Cited by-同舟云学术

Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates

Published:2006-06 Issue:11 Volume:99 Page:114509
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kyono Takashi,Hirayama Hideki,Akita Katsushi,Nakamura Takao,Adachi Masahiro,Ando Koshi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2200749

Reference32 articles.

1. 250nmAlGaN light-emitting diodes

2. Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide

3. 350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

4. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser

5. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

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