Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide-Reference-Cited by-同舟云学术

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Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide

Published:2005-04-08 Issue:No. 17 Volume:44 Page:L502-L504
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Moe Craig G.,Masui Hisashi,Schmidt Mathew C.,Shen Likun,Moran Brendan,Newman Scott,Vampola Kenneth,Mates Tom,Keller Stacia,Speck James S.,DenBaars Steven P.,Hussel Chris,Emerson David

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction;Applied Physics Express;2020-04-08

2. AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates;ACS Photonics;2020-01-27

3. Developments in AlGaN and UV-C LEDs grown on SiC;Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII;2018-02-15

4. Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier;Superlattices and Microstructures;2016-09

5. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition;Semiconductor Science and Technology;2016-06-30

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