Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy

Published:2019-02 Issue: Volume:508 Page:66-71
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Aiello Anthony^ORCID,Pandey Ayush,Bhattacharya Aniruddha^ORCID,Gim Jiseok,Liu Xianhe,Laleyan David A.^ORCID,Hovden Robert,Mi Zetian^ORCID,Bhattacharya Pallab

Funder

Materials Research Science and Engineering Center

DOE Office of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

2. Advances in group III-nitride-based deep UV light-emitting diode technology

3. Ultraviolet light-emitting diodes in water disinfection

4. 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering

5. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

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