85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-14825-8.pdf
Reference25 articles.
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3. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26, 014036 (2011).
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5. Hirayama, H., Yatabe, T., Noguchi, N., Ohashi, T. & Kamata, N. 231–261 nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire. Appl. Phys. Lett. 91, 071901 (2007).
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