Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Published:2007-04-05 Issue:4A Volume:46 Page:1458-1462
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imura Masataka,Nakano Kiyotaka,Fujimoto Naoki,Okada Narihito,Balakrishnan Krishnan,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu,Noro Tadashi,Takagi Takashi,Bandoh Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference21 articles.

1. Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores

2. Selective excitation of tryptophan fluorescence decay in proteins using a subnanosecond 295nm light-emitting diode and time-correlated single-photon counting

3. High Performance AlGaInN Ultraviolet Light-Emitting Diode at the 340 nm Wavelength

4. The role of threading dislocations in the physical properties of GaN and its alloys

5. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

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