Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1737061
Reference14 articles.
1. Ultraviolet AlGaN multiple-quantum-well laser diodes
2. 365 nm Ultraviolet Laser Diodes Composed of Quaternary AlInGaN Alloy
3. Room-temperature deep-ultraviolet-stimulated emission from AlxGa1−xN thin films grown on sapphire
4. Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells
5. 292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base
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