Initial growth studies of silicon oxynitrides in a N2O environment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362993
Reference29 articles.
1. Composition and growth kinetics of ultrathin SiO2films formed by oxidizing Si substrates in N2O
2. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
3. Radiation hardness of MOSFETs with N/sub 2/O-nitrided gate oxides
4. Improvement of charge trapping characteristics of N/sub 2/O-annealed and reoxidized N/sub 2/O-annealed thin oxides
5. MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O
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1. Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas;Materials Science in Semiconductor Processing;2017-11
2. Electrical and physicochemical properties of atomic-layer-deposited HfO2 film on Si substrate with interfacial layer grown by nitric acid oxidation;APPL SURF SCI;2016
3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition;Journal of Applied Physics;2003-06
4. Reaction–diffusion in high-k dielectrics on Si;Surface Science Reports;2003-02
5. Rate-limiting steps during nitrogen incorporation in furnace-grown silicon oxynitrides: effects on wafer-to-wafer uniformity;Thin Solid Films;2000-05
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