Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103550
Reference11 articles.
1. Advantages of thermal nitride and nitroxide gate films in VLSI process
2. Thermal nitridation of Si and SiO2for VLSI
3. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing
4. Improvement of thin-gate oxide integrity using through-silicon-gate nitrogen ion implantation
5. Effect of high‐temperature, postoxidation annealing on the electrical properties of the Si–SiO2 interface
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