Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study-Reference-Cited by-同舟云学术

Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study

Published:2016-03-28 Issue:12 Volume:119 Page:125305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cao Haining¹²,Srivastava Pooja¹,Choi Keunsu¹,Kim Seungchul¹²,Lee Kwang-Ryeol¹²

Affiliation:

1. Computational Science Research Center, Korea Institute of Science and Technology, 5, Hwarangno 14-gil, Seongbuk-gu, Seoul 02792, South Korea

2. Department of Nanomaterial Science and Technology, Korea University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, South Korea

Funder

Korea Institute of Science and Technology (KIST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4944707

Reference30 articles.

1. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

2. NH3and NO interaction with Si(100)-(2×1) surfaces

3. High-κ/Metal Gate Science and Technology

4. Growth and Film Characteristics of N 2 O and NO Oxynitride Gate and Tunnel Dielectrics

5. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

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