Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N 2 O gas

Published:2017-11 Issue: Volume:70 Page:63-67
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Enta Yoshiharu,Wada Makoto,Arita Mariko,Takami Takahiro

Funder

JSPS KAKENHI

Graduate School of Science and Technology, Hirosaki University

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference39 articles.

1. Growth and characterization of ultrathin nitrided silicon oxide films

2. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

3. Highly Reliable Thin Nitrided SiO2Films Formed by Rapid Thermal Processing in an N2O Ambient

4. Study of the composition of thin dielectrics grown on Si in a pure N2O ambient

5. Oxynitiride gate dielectrics prepared by rapid thermal processing using mixtures of nitrous oxide and oxygen

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP