MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O-Reference-Cited by-同舟云学术

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MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O

Published:1991-08 Issue:8 Volume:12 Page:416-418
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ting W.,Lo G.Q.,Ahn J.,Chu T.Y.,Kwong D.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/3413/00119150.pdf?arnumber=119150

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5. Improved Electrical Characteristics of NO-Based Storage Dielectric by N[sub 2]O Wet Oxidation and Postoxidation Treatment for Trench DRAM;Electrochemical and Solid-State Letters;2006

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