Reduction of Donor-like Interface Traps of n-Type Metal–Oxide–Semiconductor Field-Effect-Transistors Using Hydrogen-Annealed Wafer andIn-situHF-Vapor Treatment
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Published:2006-01-10
Issue:1A
Volume:45
Page:61-63
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Chao Tien Sheng,Lin Yu Hsin,Yang Wen Luh
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering