In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1968436
Reference18 articles.
1. Gallium‐nitride‐based devices on silicon
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4. Model for stress generated upon contact of neighboring islands on the surface of a substrate
5. Stress Anisotropy in Evaporated Iron Films
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