Gallium‐nitride‐based devices on silicon-Reference-Cited by-同舟云学术

Gallium‐nitride‐based devices on silicon

Published:2003-08-27 Issue:6 Volume: Page:1940-1949
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dadgar A.¹,Poschenrieder M.¹,Daumiller I.²,Kunze M.²,Strittmatter A.³,Riemann T.¹,Bertram F.¹,Bläsing J.¹,Schulze F.¹,Reiher A.¹,Krtschil A.¹,Contreras O.⁴,Kaluza A.⁵,Modlich A.⁵,Kamp M.⁵,Reißmann L.³,Diez A.¹,Christen J.¹,Ponce F.A.⁴,Bimberg D.³,Kohn E.²,Krost A.¹

Affiliation:

1. Otto‐von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

2. University of Ulm, Department of Electron Devices and Circuits, 89069 Ulm, Germany

3. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

4. Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA

5. Global Light Industries GmbH, Carl‐Friedrich‐Gauß‐Str. 1, 47475 Kamp‐Lintfort, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303123

Reference39 articles.

1. Low‐temperature metalorganic chemical vapor deposition of InP on Si(001)

2. GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer

3. Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates

4. High-speed InGaAs on Si metal-semicondudor-metal photodetectors

5. Realization of GaAs/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the determination of alloy composition using optical spectroscopy in MOVPE grown InGaN layers on Si(111);Superlattices and Microstructures;2019-10

2. Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si;Semiconductor Science and Technology;2018-06-19

3. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors;Semiconductor Science and Technology;2017-08-30

4. Harsh Environment Materials;Reference Module in Materials Science and Materials Engineering;2016

5. Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate;physica status solidi (a);2015-07-14