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High-speed InGaAs on Si metal-semicondudor-metal photodetectors

  • Published:1994-08-04 Issue:16 Volume:30 Page:1348-1350
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:

Author:

Dröge E.,Böttcher E.H.,Bimberg D.,Krost A.,Grundmann M.,Schnabel R.F.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InN Quantum Dot Based Infra-Red Photodetectors;Journal of Nanoscience and Nanotechnology;2016-01-01

2. Gallium‐nitride‐based devices on silicon;physica status solidi (c);2003-08-27

3. High-quality In0.53Ga0.47As on exactly (001)-oriented Si grown by metal-organic vapour-phase epitaxy;Journal of Crystal Growth;1997-02

4. Performance of InGaAs metal-semiconductor-metal photodetectors on Si;IEEE Photonics Technology Letters;1996-05

5. Dark-current analysis of InGaAs-MSM-photodetectors on silicon substrates;IEEE Transactions on Electron Devices;1996
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