Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate-Reference-Cited by-同舟云学术

Growth of nitride‐based light emitting diodes with a high‐reflectivity distributed Bragg reflector on mesa‐patterned silicon substrate

Published:2015-07-14 Issue:10 Volume:212 Page:2297-2301
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Damilano Benjamin¹,Brochen Stéphane¹,Brault Julien¹,Hossain Tasnia¹²,Réveret François³,Frayssinet Eric¹,Chenot Sébastien¹,Courville Aimeric¹,Cordier Yvon¹,Semond Fabrice¹

Affiliation:

1. CRHEA‐CNRS UPR10, Centre de Recherche sur l'Hétéro‐Epitaxie et ses ApplicationsCentre National de la Recherche Scientifique, 06560 ValbonneFrance

2. Département de Physique, Université de Nice Sophia‐AntipolisParc Valrose, 28 av. Valrose, 06108 Nice cedex 2France

3. Institut Pascal UMR 6622, CNRS, Université Blaise Pascal24 avenue des landais, 63177 Aubière cedexFrance

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201532303

Reference11 articles.

1. Gallium‐nitride‐based devices on silicon

2. Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy

3. Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy

4. Stress distribution of 12 μm thick crack free continuous GaN on patterned Si(110) substrate

5. Patterned silicon substrates: A common platform for room temperature GaN and ZnO polariton lasers

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