The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer-Reference-Cited by-同舟云学术

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

Published:2017 Issue:30 Volume:19 Page:4330-4337
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Deng Gaoqiang¹²³⁴⁵,Zhang Yuantao¹²³⁴⁵^ORCID,Huang Zhen¹²³⁴⁵,Yan Long¹²³⁴⁵,Li Pengchong¹²³⁴⁵,Han Xu¹²³⁴⁵,Yu Ye¹²³⁴⁵,Chen Liang¹²³⁴⁵,Zhao Degang¹⁶⁷⁸⁵,Du Guotong¹²³⁴⁵

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics

2. College of Electronic Science and Engineering

3. Jilin University

4. Changchun 130012

5. China

6. Institute of Semiconductors

7. Chinese Academy of Science

8. Beijing 100083

Abstract

A model was proposed to explain the epitaxial growth mechanism of N-polar GaN films with an in situ deposited porous SiN_x interlayer.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE00840F

Reference46 articles.

1. Prospects for LED lighting

2. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

3. High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

4. GaN-based light-emitting diodes on various substrates: a critical review

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of N-polarity GaN films on graphene/SiC substrates by interfacial atomic manipulation;Applied Surface Science;2024-11

2. Improved characteristics of (11 2‾2) plane AlGaN films grown on SiNx interlayer;Materials Science in Semiconductor Processing;2024-10

3. Growth of high-quality nitrogen-polar GaN film by two-step high-temperature method;Thin Solid Films;2022-06

4. Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer;Journal of Alloys and Compounds;2021-04

5. Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes;CrystEngComm;2021