High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer-Reference-Cited by-同舟云学术

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High-temperature carrier density and mobility enhancements in AlGaN/GaN HEMT using AlN spacer layer

Published:2017-04 Issue: Volume:464 Page:175-179
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ko Tsung-Shine,Lin Der-Yuh,Lin Chia-Feng,Chang Che-Wei,Zhang Jin-Cheng,Tu Shang-Ju

Funder

Ministry of Science and Technology

Republic of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. Electron mobility in AlxGa 1−x N/G a N heterostructures;Hsu;Phys. Rev. B,1997

2. Electron mobility exceeding 104cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate;Wang;Appl. Phys. Lett.,1999

3. AlGaN/AlN/GaN high-power microwave HEMT;Shen;IEEE Electron Device Lett.,2001

4. Megawatt solid-state electronics;Brown;Solid-State Electron.,1998

5. Band parameters for III–V compound semiconductors and their alloys;Vurgaftman;J. Appl. Phys.,2001

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