A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed-Reference-Cited by-同舟云学术

A Comprehensive Study on AlGaN/GaN-Based HEMT for High-Speed

Published:2024-02-23 Issue:01 Volume:33 Page:
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Kandpal Jyoti¹,Kumar Amit²

Affiliation:

1. Department of Electronics and Communication Engineering, Graphic Era Hill University, Dehradun, Uttarakhand, India

2. Department of Electronics and Communication Engineering, National Institute of Technology, Delhi, India

Abstract

GaN-based solutions can handle emerging technological demands from today’s fast-changing electronics industry. AlGaN/GaN heterostructures offer the possibility of a variety of applications. The primary issues in commercializing GaN-based technology are reliability and performance enhancement. This research focuses on recent improvements in AlGaN/GaN-based high-electron-mobility transistors (HEMTs) for diverse high-speed applications. This review will assist researchers in gathering all relevant knowledge on AlGaN/GaN HEMT structure in one location, allowing them to focus on developing high-speed applications.

Publisher

World Scientific Pub Co Pte Ltd

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156424500010

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