Electron mobility inAlxGa1−xN/GaNheterostructures
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.56.1520/fulltext
Reference21 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Transport properties of GaAs‐AlxGa1−xAs heterojunction field‐effect transistors
3. Dependence of electron mobility in modulation‐doped GaAs‐(AlGa)As heterojunction interfaces on electron density and Al concentration
4. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
5. Electron transport in polar heterolayers
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