Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor-Reference-Cited by-同舟云学术

Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor

Published:2024-05 Issue:5 Volume:71 Page:3175-3182
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shetty Satish¹^ORCID,Eisner Savannah R.²^ORCID,Hassan Ayesha³^ORCID,Lalwani Anand⁴^ORCID,Baral Dinesh¹^ORCID,Mazur Yuriy I.¹^ORCID,Senesky Debbie G.⁴^ORCID,Churchill H. O. H.¹,Chen Zhong³^ORCID,Mantooth H. Alan³^ORCID,Salamo Gregory J.¹^ORCID

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA

2. Department of Electrical Engineering, Columbia University, New York, NY, USA

3. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

4. Department of Aeronautics and Astronautics, Stanford University, Stanford, CA, USA

Funder

Army (ARL); Toward a SiC CMOS Process for Advanced Integration

MonArk NSF Quantum Foundry through the National Science Foundation Q-AMASE-i Program under NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

https://ieeexplore.ieee.org/ielam/16/10508280/10492725-aam.pdf

Reference22 articles.

1. High-Frequency Power Electronics at the Grid Edge: A Bottom-Up Approach Toward the Smart Grid

2. A Fast Interface Circuit Using Multiple Signal Paths for High Bandwidth Hall Sensors

3. Monolithic integrated Hall devices in silicon circuits

4. InAs/Al0.2Ga0.8Sb quantum well Hall effect sensors

5. High Temperature Hall sensors using AlGaN/GaN HEMT Structures

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1. Mechanical strain effect on the optoelectronic properties and photocatalysis applications of layered AlN/GaN nanoheterostructure;Journal of Molecular Modeling;2024-08-13

2. Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors;Applied Physics Letters;2024-07-22